Field limiting ring とは
Web【背景技術】 【0002】 半導体装置において高耐圧を得る方法の一つとして、フィールドリミッティングリング (Field Limiting Ring 、以下ではFLRと略記する場合がある)が知られている。 以下 に、FLRを有する従来の半導体装置について、特許文献1に記載の半導体装置を例とし て説明する。 【0003】 図5及び図6は、FLRを有する従来の半導体装置100を … Web主面表面の絶縁層内の可動イオンを低減するとともに、耐圧を高めた半導体装置を提供する。半導体装置2は、複数のFLR14と、絶縁層5と、半導体層3を備える。複数のFLR14は、基板8の平面視において、素子が形成されている活性領域を囲んでいる。
Field limiting ring とは
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WebA planar multiple floating field-limiting ring structure, designed for above 600V blocking capability, is analyzed in this work. We have proven by simulation and experiment that adding a well designed buffer layer in the epi-substrate region counteracts on the drop in electric field which is due to the space charge limited current and as such the buffer … WebThe computed results demonstrate the superiority of the field plate technique over the field-limiting ring technique for planar shallow-junction high-voltage devices, both discrete and …
WebJul 2, 2008 · A planar edge termination technique of trenched field limiting ring is investigated by using 2-dimensional numerical analysis and simulation. The better voltage blocking capability and reliability ... WebAbstract: This paper demonstrates the breakdown voltage characteristics of different edge termination structures including aluminum (Al)-deposited guard ring and Al-deposited …
WebField-limiting rings, also referred to as guard rings, are typically concentric rings encircling the main body of a semiconductor device. Many variations of field-limiting rings... WebJul 1, 2006 · A new analytical method to design the multiple floating field limiting ring system of the power devices has been proposed in this paper. Based on this method result, the effects of the junction depth and ring spacing on the voltage and edge field profile have been analyzed. By using the critical field concept, a new simple procedure to predict ...
WebMay 25, 2000 · Abstract: The Field Limiting Ring (FLR) termination structures are examined in order to confirm the high voltage technology of SiC diodes and FETs. Elemental devices with planar FLR terminations are fabricated and their reverse I-V characteristics are determined using 4H n-type SiC.
Web今回、3.3 kV 級MOSFETに適用する終端構造として、FLR(Field Limiting Ring)を採用した。 FLRはAlイオンを注入することによって形成し、180 ~ 300 µmの注入領域幅を有して … scrotum abcess symptomsWebA planar edge termination technique of trenched field limiting ring is investigated by using 2-dimensional numerical analysis and simulation. The better voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. pc helicoptersWebAug 30, 2024 · 図3:チップ内の等電位面の分布. ガードリング(GR)とは. ガードリング(あるいはField Limiting Ring)とは高耐圧の半導体に見られる特有の構造です。. 図3 に示すようにMOSFETの最外周のセルは隣接する構造がないわけですからオフ時の等電位面 … scrotum abscess antibiotic treatmentWebJan 29, 2011 · 空乏層が長く延伸することと、 電界強度が緩和されることと、 耐圧が維持されることは、結果的に近い意味をもつ。 このように、フローティング拡散層を入れる … scrots sincelejoWebNov 1, 2024 · The floating guard-ring structure is processed without additional manufacturing steps but requires more than 100 rings for devices with > 10 kV blocking voltage capability [23], [24]. A 1500 µm ... pcheiper.ch.huan.tvWebJun 18, 2010 · Termination region plays an important role in high voltage power VDMOSFETs. Termination structure such as floating-field-limiting-rings and field plates are the common structures used in a termination region because they can be fabricated without additional masks. However, sometimes we use both of them, sometimes only the floating … pche heatricWebNov 1, 1984 · Multiple field limiting ring systems are well established as a means of protecting high voltage, deep diffused junctions from premature electrical breakdown. However, as the depths of these diffusions decrease, the number of rings required to achieve a given percentage of the plane breakdown, increases and efficient design … scrot tears mug