Electric-field control of ferromagnetism
WebIn this Letter, the electric-field control of ferromagnetism was demonstrated in a back-gated Mn-doped ZnO (Mn-ZnO) nanowire (NW) field-effect transistor (FET). The ZnO … WebAug 11, 2024 · To explore the origin of magnetism, the effect of light Cu-doping on ferromagnetic and photoluminescence properties of ZnO nanocrystals was investigated. These Cu-doped ZnO nanocrystals were prepared using a facile solution method. The Cu2+ and Cu+ ions were incorporated into Zn sites, as revealed by X-ray diffraction (XRD) and …
Electric-field control of ferromagnetism
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WebThe electric field control of the Curie temperature , coercivity , magnetization direction [5, 6 ... Electric field effect on ferromagnetism in the Pt/Co system. (A) Magnetization curves detected in the Hall resistance R Hall for V G = −10 and 10 V at 321 K. The inset shows the top view of the Hall bar structure with the gate electrode on top ... WebDec 18, 2024 · This work identifies a simple and effective pathway to realize the electric-field control of ferromagnetism at room temperature, and may lead to applications that …
Web1 day ago · The Hall effect-based electric measurements indicated a decline in charge carriers and mobility accompanied by an increase in magnetoresistance and resistivity. ... Shamsul Arafin, Liang He, Manekkathodi Afsal, Lih-Juann Chen, and Kang L. Wang. Electric-field control of ferromagnetism in Mn-doped ZnO nanowires. Nano Letters, … Webelectric-field control of ferromagnetism in a thin-film semicon-ducting alloy, using an insulating-gate field-effect transistor structure. By applying electric fields, we are able …
WebMar 31, 2006 · A new class of ferromagnets—dilute magnetic semiconductors (DMS) based on III–V materials (e.g. In 1-x Mn x As or Ga 1-x Mn x As)—which are both semiconducting and ferromagnetic (FM) at low temperature, have attracted a great deal of attention (as working media for spintronics) following the discovery of ferromagnetism in Ga 1-x Mn …
WebMay 27, 2011 · Electric field control of ferromagnetism should be possible at room temperature if ferromagnetism originates from a carrier-mediated mechanism. The …
Web1 μB to2.5–3.0 μB perMnisindicativeofastrong magnetoelectriccoupling effect,andsuch direct electric field control of the magnetization at an interface has significant potential for spintronic applications. DOI: 10.1103/PhysRevLett.115.047601 PACS numbers: 77.55.Nv, 75.70.Cn Direct electric field control of magnetism is among the how expensive is building a pcWebJan 19, 2007 · Because the T C values of the 3d metals—Fe, Co, and Ni—and of some of their alloys are above room temperature, the possible use of an electric field to modify and control the intrinsic magnetic properties [e.g., magnetization or magnetocrystalline anisotropy (K U)] of such metallic systems is attractive.However, as a result of screening … how expensive is carpetWebDec 18, 2024 · Electric-field-driven oxygen ion evolution in the metal/oxide heterostructures emerges as an effective approach to achieve the electric-field control of ferromagnetism. However, the involved redox reaction of the metal layer typically requires extended operation time and elevated temperature condition, which greatly hinders its practical ... hidemyass trialWebDec 1, 2000 · In semiconductors, the conductivity can be varied by applying an electric field, but the electrical manipulation of magnetism has proved elusive. Here we … how expensive is budget blindsWebJul 23, 2015 · New mechanisms for achieving direct electric field control of ferromagnetism are highly desirable in the development of functional magnetic … hidemyass testversionWebLa2CoMnO6 (LcmO)–ZnO nanocomposite thin films grown on SrTiO3 and Nb–SrTiO3 (001) are investigated. The films grow in the form of self-assembled epitaxial vertically aligned … hidemyass smartphoneWebOct 17, 2006 · The authors show modulation of Curie temperature T C and coercivity μ 0 H c by applying external electric fields E in a ferromagnetic semiconductor (Ga,Mn)As, where a field-effect transistor structure with an Al 2 O 3 gate insulator is utilized. how expensive is chemo